Nataliya N. Ormont

Senior Research Scientist (b. 1941)
Graduated from Moscow State University (1964). Ph.D. in Physics (1975)

Scientific interests:

Photoelectric phenomena and metastability in amorphous semiconductors.

Recent publications:

• I.P. Zvyagin, I.A. Kurova and N.N. Ormont. On the nature of photo-induced defects and recombination mechanisms in light-soaked a-Si:H films. J. Non-Cryst. Solids 164-166, Pt. 1, 631 (1993).

• I.P. Zvyagin, I.A. Kurova and N.N. Ormont. Nature of photoinduced defects in hydrogenated amorphous silicon. Semiconductors 27, 942 (1993).

• I.A. Kurova, A.N. Lupacheva, N.V. Meleshko, N.N. Ormont and L.P. Avakyants. Electrical properties of a-Si:H(B) films subjected to intense light pulses. Semiconductors 28, 72 (1994).

• I.A. Kurova, O.N. Miroshnik and N.N. Ormont. Effect of high-temperature annealing on the electrical and photoelectric properties of compensated a-Si:H films containing boron and fluorine. Semiconductors 30, 391 (1996).

• I.P. Zvyagin, I.A. Kurova, N.N. Ormont. Variable range hopping in hydrogenated amorphous silicon. Phys. Status Solidi C, 1, 101-104 (2004).